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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2001.04.18 Page No. : 1/4 H2N7000 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. Absolute Maximum Ratings * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ............................................................................... 400 mW * Maximum Voltages and Currents (Ta=25C) BVDSS Drain to Source Voltage......................................................................................... 60 V BVGSS Gate to Source Voltage ......................................................................................... 40 V ID Drain Current............................................................................................................. 200 mA Characteristics (Ta=25C) Symbol VDSS IDSS IGSS VGS(th) ID(on) RDS(on) VDSS(on)1 VDSS(on)2 Min. 60 0.8 75 Max. 1 10 3 5 2.5 0.4 Unit V uA nA V mA V v Test Conditions ID=10uA, VGS=0 VDS=48V VGS=15V VDS=3V, ID=1mA VGS=4.5V, VDS=10V VGS=10V, ID=0.5A VGS=10V, ID=0.5A VGS=4.5V, ID=75mA H2N7000 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve On-Region Characteristic 2.0 1.8 VGS=10V 2.5 VDS=10V Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2001.04.18 Page No. : 2/4 Drain Current Variation with Gate Voltage & Temperature ID Drain-Source Current (A) 1.6 1.4 1.2 1.0 7V 0.8 0.6 0.4 5V 0.2 4V 0.0 0 2 4 6 8 10 0.0 0 2 4 6 8 6V 8V Tj=-55C ID Drain-Source Current (A) 2.0 1.5 Tj=25C 1.0 Tj=150C 0.5 10 VDS, Drain-Source Voltage (V) VGS, Gate-Source Voltage (V) Transconductance Variation with Drain Current & Temperature 0.40 Capacitance Characteristics 70 60 50 VGS=10V f=1MHz Tj=-55C 0.35 gFS, Transconductance(S) Tj=25C 0.25 0.20 Capacitance (pF) 0.30 40 30 20 Ciss Tj=150C 0.15 0.10 0.05 0.00 0.0 0.2 0.4 0.6 0.8 1.0 Coss 10 Crss 0 0 10 20 30 40 50 ID, Drain-Source Current (A) VDS, Drain-Source Voltage (V) On Resistance Variation with Temperature 2.5 RDS(on), Normalized On-Resistance ID=0.5A VGS=10V 2.0 Body Diode Forward Voltage Variation with Current & Temperature 0.8 0.7 IS, Source-Drain Current(A) 0.6 Tj=150C 0.5 0.4 Tj=25C 0.3 0.2 Tj=-55C 0.1 1.5 1.0 0.5 0.0 -50 0.0 0 50 100 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Tj, Junction Temperature (C) VSD, Source-Drain Voltage (V) H2N7000 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2001.04.18 Page No. : 3/4 PD-Ta 450 400 Power Dissipation-PD(mW) 350 300 250 200 150 100 50 0 0 50 100 o 150 200 Ambient Temperature-Ta( C) H2N7000 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension A B 12 3 Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2001.04.18 Page No. : 4/4 2 Marking : HSMC Logo Part Number Date Code Rank Product Series 3 Laser Mark HSMC Logo Product Series C D Part Number H I E F G Ink Mark Style : Pin 1.Source 2.Gate 3.Drain 1 3-Lead TO-92 Plastic Package HSMC Package Code : A *:Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I 1 2 3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2 Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2 Notes : 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : * Lead : 42 Alloy ; solder plating * Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : * Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 * Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 H2N7000 HSMC Product Specification |
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